Abstract:
Zinc Oxide (ZnO) thin films were prepared on corning (7059) glass substrates at a thickness of 75.5 and
130.5nm by RF sputtering technique. The deposition was carried out at room temperature after which the samples
were annealed in open air at 1500C. The electrical and structural properties of these films were studied. The
electrical properties of the films were monitored by four-point probe method while the structural properties were
studied by X-ray diffraction (XRD). It was found that the electrical resistance of the films decreases with increase
in the thickness of the films. The XRD analysis of the films showed that the films have a peak located at
- with hkl (002). Other parameters calculated include the stress (s ) and the grain size (D).
