Electrical Characterization of Fluorine Doped Tin Oxide Deposited by Spray Pyrolysis Technique and Annealed in Open Air

Abdullahi, S.

dc.contributor.author	Abdullahi, S.
dc.date.accessioned	2018-01-29T09:57:48Z
dc.date.available	2018-01-29T09:57:48Z
dc.date.issued	2015
dc.identifier.issn	2166-0182
dc.identifier.uri	http://hdl.handle.net/123456789/747
dc.description.abstract	Transparent conducting Fluorine tin oxide (FTO) thin films with the thickness of 100nm were deposited on glass substrates via spry pyrolysis technique, and three samples were post-annealed in open air atmosphere for one hour at 423K, 573K and 723K selected temperature points respectively. A four-point probe measurement system was adopted to characterize the FTO thin films. Influence of thermal annealing in air atmosphere on electrical properties was investigated in detail. The sheet resistance reached the minimum of 1.53 × 104 Ω/cm2 for the sample annealed at 423K. It increased dramatically at even higher annealing temperature.	en_US
dc.language.iso	en_US	en_US
dc.publisher	International Journal of Nano and Material Sciences	en_US
dc.subject	Department of Physics	en_US
dc.title	Electrical Characterization of Fluorine Doped Tin Oxide Deposited by Spray Pyrolysis Technique and Annealed in Open Air	en_US
dc.type	Article	en_US