Electrical Characterization of Fluorine Doped Tin Oxide Deposited by Spray Pyrolysis Technique and Annealed under Nitrogen Atmosphere

Abstract

Spray pyrolysis technique has been used to deposit Fluorine doped Tin Oxide (FTO) thin films. The deposited thin films were then annealed under Nitrogen atmosphere for 60 minutes at temperatures of 423K, 573K and 723K respectively. Four-point probe method was used to measure the electrical properties of the FTO thin films. The average sheet resistance was found to be within the range of 3.62× 105 to 1.22 × 104Ω/cm2. The resistance and the resistivity of the films were also investigated. It has been observed that as the annealing temperature increases the values sheet resistance and the resistivity decreases.