Influence of Annealing Temperature on Optical and Electrical Properties of Cu2ZnSnS4 (CZTS) thin Films Deposited by Sputtering Method from a Single Quaternary Target

Abdullahi, S.; Momoh, M.; Moreh, A.U.; Bayawa, A.M.; Hamza, B.; Argungu, G.M.; Popoola, O.T.

dc.contributor.author	Abdullahi, S.
dc.contributor.author	Momoh, M.
dc.contributor.author	Moreh, A.U.
dc.contributor.author	Bayawa, A.M.
dc.contributor.author	Hamza, B.
dc.contributor.author	Argungu, G.M.
dc.contributor.author	Popoola, O.T.
dc.date.accessioned	2018-01-29T09:24:35Z
dc.date.available	2018-01-29T09:24:35Z
dc.date.issued	2017
dc.identifier.issn	2395-6011
dc.identifier.uri	http://hdl.handle.net/123456789/743
dc.description.abstract	Cu2ZnSnS4 thin films were fabricated by one-step RF magnetron sputtering of a single quaternary Cu2ZnSnS4 (CZTS) chalcogenide target on corning glass substrate, followed by annealing at 523, 623 and 723K under nitrogen atmosphere for 60 minutes. Optical transmittance and reflectance data of the films were utilized to compute the absorption coefficient, refractive index, extinction coefficient and optical band gap energy of the films. The nature of the optical transition has been direct allowed with average optical band gap energies ranging between 1.5 eV and 2.4 eV. The optical band gap energy has a tendency to increase with the increase in the annealing temperature. The resistance and sheet resistance of the films ranges from 4.1 -3Ω cm-14680 -3Ω cm and 0.02 3Ω-0.25 3Ω respectively.	en_US
dc.language.iso	en_US	en_US
dc.publisher	International Journal of Scientific Research in Science and Technology	en_US
dc.subject	Department of Physics	en_US
dc.subject	Department of Pure and Applied Chemistry	en_US
dc.title	Influence of Annealing Temperature on Optical and Electrical Properties of Cu2ZnSnS4 (CZTS) thin Films Deposited by Sputtering Method from a Single Quaternary Target	en_US
dc.type	Article	en_US